| 摘要 |
An organic semiconductor device having a p-type organic semiconductor layer interposed between a source electrode and a drain electrode is provided with an n-type organic semiconductor layer arranged in the middle of the p-type organic semiconductor layer and a gate electrode embedded in the n-type organic semiconductor layer. An organic semiconductor device having an n-type organic semiconductor layer interposed between a source electrode and a drain electrode is provided with a p-type organic semiconductor layer arranged in the middle of the n-type organic semiconductor layer and a gate electrode embedded in the p-type organic semiconductor layer, thereby suppressing leakage current flowing between the electrodes. An organic semiconductor device provided with an organic semiconductor layer having carrier mobility and interposed between a source electrode and a drain electrode, further has a gate electrode, which is embedded in the organic semiconductor layer and composed of at least two intermediate electrode pieces respectively disposed on at least two planes spaced and arranged between the source electrode and the drain electrode in the direction of the film thickness. The gate electrode is embedded therein through fusion of the organic semiconductor layer.
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