| 摘要 |
A method of forming a common source line of a flash memory device is provided to reduce manufacturing processes and to improve the yield by forming the common source line in a semiconductor substrate using adjacent gate electrode patterns for an SSL(Source Select Line) as an ion-implantation mask. A first gate electrode pattern(DSL), a plurality of second gate electrode patterns(W/L) and at least two or more third gate electrode patterns(SSL) are formed on a semiconductor substrate(10). A common source line(22) is formed in the substrate by performing an ion-implantation using the third gate electrode patterns as an ion-implantation mask. An insulating layer(24) with a contact plug for contacting the common source line is formed thereon.
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