发明名称 |
PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC |
摘要 |
A photosensitive composition which has excellent storage stability and gives an interlayer dielectric having an improved thickness limit. The photosensitive composition is characterized by comprising: a modified polysilsesquiazane which is obtained by replacing up to 50 mol% of basic structural units represented by the general formula -[SiR1(NR 2)1.5]- (wherein R1's each independently represents C1-3 alkyl or (un)substituted phenyl; and R2 's each independently represents hydrogen, C1-3 alkyl, or (un) substituted phenyl) by connecting groups other than silazane bonds and which has a weight-average molecular weight of 500 to 200,000; and a photo-acid generator. |
申请公布号 |
KR20050028039(A) |
申请公布日期 |
2005.03.21 |
申请号 |
KR20057000956 |
申请日期 |
2005.01.18 |
申请人 |
AZ ELECTRONIC MATERIALS (JAPAN) K.K. |
发明人 |
MATSUO, HIDEKI;NAGAHARA, TATSURO |
分类号 |
C08G77/54;C08G77/62;G03F7/004;G03F7/039;G03F7/075;H01L21/027;H01L21/312;(IPC1-7):G03F7/075 |
主分类号 |
C08G77/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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