| 摘要 |
A non-volatile semiconductor memory device is provided to allow efficient programming operation and erasing operation in a short period of time. According to the non-volatile semiconductor memory device, a memory block includes a plurality of memory cells memorizing non-volatile data. A power supply circuit generates a voltage to be applied to the plurality of memory cells. And a control unit applies an erase pulse to the plurality of memory cells of the memory block collectively by controlling the power supply circuit. The control unit increases the erase pulse in correspondence to the number of applying the erase pulse voltage with a first fixed pulse width until the erase pulse voltage reaches the maximum applying voltage value. And when the erase pulse voltage reaches the maximum applying voltage value, the control unit increases the pulse width of the erase pulse in correspondence to the number of applying the erase pulse voltage.
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