发明名称 Halbleiter-Volumeneffekt-Anordnung
摘要 1,116,390. Gunn effect devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 3 Nov., 1966 [27 Nov., 1965], No. 49418/66. Heading H1K. A Gunn effect amplifier comprises at least two Gunn effect elements individually biased to act as amplifiers. The elements may be separate bodies or may be formed as sections of a single body by providing one or more intermediate contacts. The elements may operate at the same or different frequencies, and two or more may be connected to operate in parallel. One or more of the elements may be provided with at least one p-n junction for rectificaton or demodulation of the input or output pulses, and the behaviour of the elements may be modified by subjecting them to controlled coherent or incoherent light irradiation or to variations in temperature, mechanical bias or electrical bias.
申请公布号 DE1466545(A1) 申请公布日期 1969.06.19
申请号 DE19651466545 申请日期 1965.11.27
申请人 TELEFUNKEN-PATENTVERWERTUNGS-GMBH 发明人 GERHARD SCHICKLE,DIPL.-ING.
分类号 H01L47/00;H03F3/10;H03F3/55 主分类号 H01L47/00
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