| 摘要 |
A semiconductor device includes first insulating film pattern (106) formed on semiconductor substrate (100), wiring formed on first insulating film, third insulating film pattern (114a) containing silicon-oxide-based material formed on sidewall of wiring and contact patterns (116) formed on wiring. The wiring having conductive film pattern and second insulating film patterns (110) The contact pattern has contact spacers and form contact holes (103), which pass through the first and third insulating film pattern. An independent claim is included for manufacture of semiconductor device. |
