| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating a nitride light emitting device in which current distribution is enhanced, light absorption effect is reduced and emission efficiency is enhanced. <P>SOLUTION: A bonding layer is formed of two kinds or more of metal or alloy, a nitride light emitting structure grown on a substrate of low thermal conductance is boded to a substrate of high thermal conductance, the substrate of low thermal conductance is removed by chemical etching, dry etching or mechanical polishing and the nitride light emitting structure is transferred onto the substrate of high thermal conductance. Furthermore, an ohmic contact is formed of a transparent conductive layer and an n-type nitride layer in order to enhance uniformity of current distribution sharply, to reduce light absorption effect and to enhance emission efficiency of the light emitting device. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
