| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the element characteristics, such as emission efficiency in a light-emitting device, such as a light-emitting diode and a semiconductor laser device. <P>SOLUTION: A semiconductor device is provided with an active layer (activate layer) 105 comprising a first semiconductor layer that is formed on a sapphire substrate 101. In the active layer (activate layer) 105, a first oxidized region comprising an oxidized layer is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2005072571(A) |
申请公布日期 |
2005.03.17 |
| 申请号 |
JP20040226898 |
申请日期 |
2004.08.03 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAYAMA HISASHI;UEDA TETSUZO;YURI MASAAKI;TAKIZAWA TOSHIYUKI |
| 分类号 |
H01L29/786;H01L33/32;H01L33/42;H01S5/323 |
主分类号 |
H01L29/786 |
| 代理机构 |
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