METHOD FOR ADDING IMPURITIES TO METAL OXIDE TRANSPARENT CONDUCTIVE FILM

摘要

PROBLEM TO BE SOLVED: To provide technology of adding impurities to a metal oxide transparent conductive film for depositing an impurities-added metal oxide transparent conductive film of low resistivity containing a metallic oxide of different vapor pressure from a base material in a metal oxide thin film on an arbitrary substrate in a vacuum vapor deposition method using differential pressure arc plasma for a heat source. SOLUTION: A metal oxide transparent conductive film is deposited by a differential pressure arc plasma vacuum vapor deposition method by using an evaporation source consisting of at least one metal or a compound containing the metal for a base material. Impurities are added to the metal oxide transparent conductive film by continuously or intermittently introducing a compound containing at least one metal as impurities material during the vapor deposition in a gaseous mode without using any evaporation source or heating system from an arbitrary place in a vapor deposition apparatus, and the impurities-added metal oxide transparent conductive film is deposited on an arbitrary substrate. COPYRIGHT: (C)2005,JPO&NCIPI