METHOD OF FORMING SILICON-BASED INSULATING FILM HAVING LOW DIELECTRIC CONSTANT AND LOW MEMBRANE STRESS

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a silicon-based insulating film with low dielectric constant and low membrane stress. SOLUTION: The silicone insulating film is formed on a substrate by a plasma polymerization reaction, by introducing a reaction gas comprising (i) a source gas comprising a silicone hydrocarbon compound containing at least one vinyl group (silicone vinyl compound) and (ii) an additive gas into a reaction chamber, where substrates are disposed and by applying an RF electric power to the reaction gas so as to cause the plasma polymerization reaction to be triggered to vapor deposit the insulating film on the substrates. COPYRIGHT: (C)2005,JPO&NCIPI