发明名称 |
Transparent amorphous carbon structure in semiconductor devices |
摘要 |
A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
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申请公布号 |
US2005056835(A1) |
申请公布日期 |
2005.03.17 |
申请号 |
US20040789736 |
申请日期 |
2004.02.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YIN ZHIPING;WILLIAMS DAVID J.;LI WEIMIN |
分类号 |
H01L21/314;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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