发明名称 Radiation-sensitive semiconductor body having an integrated filter layer
摘要 A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between lambda1 and lambda2 where lambda2>lambda1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below lambda2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below lambda1, and passes electromagnetic radiation at a wavelength above lambda1.
申请公布号 US2005056904(A1) 申请公布日期 2005.03.17
申请号 US20040909036 申请日期 2004.07.30
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 ALBRECHT TONY;BRICK PETER;PLAINE GLENN-YVES;PHILIPPENS MARC
分类号 H01L31/02;H01L31/00;(IPC1-7):H01L31/00 主分类号 H01L31/02
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