| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain an optical semiconductor device in which a conversion efficiency of an optical energy is high. <P>SOLUTION: A p-type semiconductor layer 3 corresponding to the SOI layer of an SOI substrate 10 comprises a plurality of planar semiconductor islands 5 which are isolated from each other by a groove 4 and a groove 8 formed as trenches. An n-region 6 and a p-region 7 are formed on a pair of side planes facing a pair of the grooves 4 pinching each semiconductor island 5, whereby each semiconductor island 5 constitutes a photodiode cell. The groove 4 is filled with an electrode material 14, and the groove 8 is filled with an insulating material 18. A plurality of the photodiode cells are in series connected to each other. A depletion layer which contributes to a photoelectric transfer is formed over a wide region of the semiconductor island 5. In the range of a light arrival distance, as the groove 4 is deeper (i.e., the semiconductor layer 3 is thicker), the usable efficiency of the optical energy is enhanced. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
