| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, capable of reducing the occurrence of polishing erosion to a minimum, to reduce step on a surface undergoing a planarization processing to a minimum. SOLUTION: The semiconductor device comprises an interlayer insulating film 3 formed on a substrate 1, and a pattern 7 obtained by filling a second material in a connection hole pattern 5 formed in the interlayer insulating film 3; and the surfaces of the interlayer insulating film 3 and the pattern 7 are subjected to a flattening processing. In the semiconductor device, the pattern 7 is disposed in a dense pattern region a where the pattern 7 is densely disposed, such that the pattern coverage of a peripheral edge a2 in the dense pattern resin a is gradually lowered toward an outer periphery from a center a1 located farther inside than the peripheral edge a2. A real pattern really serving is disposed at the center part a1, and a dummy pattern is disposed at the peripheral edge a2. COPYRIGHT: (C)2005,JPO&NCIPI
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