MANUFACTURING METHOD OF SOI WAFER AND SOI WAFER

摘要

PROBLEM TO BE SOLVED: To easily and inexpensively provide an SOI wafer whose electric reliability in a device manufacturing process is high and heat generated during a device operation can efficiently be diffused. SOLUTION: In the SOI wafer, a silicon active layer is formed at least on a support substrate through an insulating film or directly. The silicon active layer and/or the support substrate is formed of silicon single crystal. The SOI wafer has 92.3% or above isotope28Si content. COPYRIGHT: (C)2005,JPO&NCIPI