| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage which can be improved in memory sensitivity and can be reduced in consumption power and which allows the formation of a low-resistance and reliable buried interconnection stably and in a short time, and also to provide its manufacturing method. SOLUTION: By forming soft magnetic material layers 83, 115, and 121 which constitute a clad structure of a word line 82 and a bit line 122 which constitute an MRAM by electroless plating, the soft magnetic material layers 83, 115, and 121 can be formed uniformly in enough thickness around main interconnections 91 and 117 (especially, copper) of the word line 82 and the bit line 122. By forming a film uniformly on a face to be brought into contact with an electroless plating liquid, excellent coating uniformity is obtained not only on the bottom of an interconnection groove, but also on the side face thereof. COPYRIGHT: (C)2005,JPO&NCIPI
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