| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition which keeps a polishing rate, increases a cleanability after polishing, suppresses generation of a flaws caused by polishing, and also suppress a surface step difference, and also to provide a polishing method using the composition. <P>SOLUTION: The polishing composition contains cerium oxide abrasive grains each having an adsorption layer for silicon oxide fine particles thereon. In order to form the adsorption layer for the silicon oxide fine particles, it is preferable that the size of the silicon oxide fine particle be smaller than the size of the cerium oxide abrasive grain. In the polishing composition, a silicon nitride film 12 is provided on a silicon wafer 11, grooves 13 for element isolation or separation are provided therein, a silicon oxide film 14 is formed on the silicon nitride film 12 and the inner walls of the grooves, the silicon oxide film 14 is polished, and elements are formed on the surface of the film 14 so as to be isolated or separated from each other with the silicon oxide film 14 within the grooves 13. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
