| 摘要 |
PROBLEM TO BE SOLVED: To accurately form a ridge or a groove with a desired shape by wet etching a layer which consists of Al<SB>Y</SB>Ga<SB>1-Y</SB>As with an arbitrary mixed crystal ratio. SOLUTION: In a semiconductor device which is constituted by sequentially laminating a second etching stop layer made of GaAs, a first etching stop layer made of In<SB>v</SB>Ga<SB>1-v</SB>P, and a current block layer made of Al<SB>Y</SB>Ga<SB>1-Y</SB>As, in contact with a first upper cladding layer made of at least Al<SB>W</SB>Ga<SB>1-W</SB>As on a substrate, and has an active layer made of InGaAs material, a horizontal part of the current block layer and a horizontal part of the first etching stop layer are completely removed in the perpendicular direction and the second etching stop layer is exposed. A second upper cladding layer made of Al<SB>T</SB>Ga<SB>1-T</SB>As is laminated on the exposed portion of the second etch stop layer. And in the relationship between Al composition Y of Al<SB>Y</SB>Ga<SB>1-Y</SB>As which constitutes the current block layer and Al composition T of Al<SB>T</SB>Ga<SB>1-T</SB>As which constitutes the second top cladding layer, Y>T is established. COPYRIGHT: (C)2005,JPO&NCIPI
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