发明名称 Methods and apparatus of etch process control in fabrications of microstructures
摘要 The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.
申请公布号 US2005059254(A1) 申请公布日期 2005.03.17
申请号 US20030666671 申请日期 2003.09.17
申请人 SHI HONGQIN;SCHAADT GREGORY P. 发明人 SHI HONGQIN;SCHAADT GREGORY P.
分类号 B81C1/00;C23F1/12;H01L;H01L21/00;H01L21/302;H01L21/311;H01L21/3213;H01L21/461;(IPC1-7):H01L21/302 主分类号 B81C1/00
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