| 摘要 |
A transverse JFET of SiC, employing an n<+>-type SiC substrate and comprising a channel region having carriers of high mobility, bringing a high yield is obtained. This transverse JFET has an n<+>-type SiC substrate, a p-type SiC film formed on a front face of the n<+>-type SiC substrate, an n-type SiC film, including a channel region, formed on the p-type SiC film, source and drain regions formed on the n-type SiC film separately on both sides of the channel region respectively, and a gate electrode provided on the SiC substrate or on the p-type SiC film.
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