| 摘要 |
<p>A flash memory semiconductor device having a low grounding conductor resistance and a low bit line capacitance is disclosed. The semiconductor device comprises a first insulating layer with a flat surface which layer is formed over a semiconductor substrate structure in which a plurality of semiconductor elements are formed, a plurality of columnar conductive plugs which are so formed as to penetrate the first insulating layer in the thickness direction, a plurality of wall-like conductive plugs which extend through the first insulating layer in the thickness direction, a second insulating layer with a flat surface which layer is so formed on the first insulating layer as to cover the columnar conductive plugs and the wall-like conductive plugs, and a plurality of first wirings having dual damascene structures. Each of the first wirings has a first portion which is so formed as to penetrate the second insulating layer in the thickness direction and connected to at least one of the columnar conductive plugs, and a second portion which is formed in the second insulating layer to and intermediate depth and apparently intersects at least one of the wall-like conductive plugs when viewed above.</p> |
