SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device is disclosed which comprises a first insulating layer (11), a first main unit (13) which is composed of an island-shaped semiconductor formed on the first insulating layer, a second main unit (14) which is composed of an island-shaped semiconductor formed on the first insulating layer, a ridge-shaped connecting unit (15) which is so formed on the first insulating layer as to connect the first main unit and the second main unit, a channel region (15a) composed of at least a part of the connecting unit extending in the longitudinal direction, a gate electrode (18) so formed as to cover the periphery of the channel region via a second insulating layer (17), a source region which is so formed as to range from the first main unit to a portion of the connecting unit lying between the first main unit and the channel region, and a drain region which is so formed as to range from the second main unit to a portion of the connecting unit lying between the second main unit and the channel region. In this semiconductor device, the semiconductor constituting the channel region has a lattice strain.