EPITAXIAL SUBSTRATE, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR LAMINATE STRUCTURE, AND PIT GENERATION SUPPRESSION METHOD IN EPITAXIAL SUBSTRATE FRONT SURFACE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial substrate of an Al-containing group III nitride semiconductor having high quality and suppressed in the occurrence of pits.

SOLUTION: A nitride layer is formed on the surface of a single crystal substrate such as sapphire and SiC by performing a nitriding processing for the substrate with NH3gas, and a buffer layer is formed to be very thin (≤5 nm) at a lower temperature than the epitaxial formation temperature of a group III nitride layer. Thereafter, the group III nitride layer is formed epitaxially. Consequently, there is realized the crystal quality that the half width of a (002) plane by an X ray locking curve measurement is ≤200 sec and the half width of a (102) plane is ≤ 1,500 sec with the substrate surface being flat at an atomic level. Further, there can be obtained the epitaxial substrate with the occurrence of pits in the substrate surface restricted to about 1/15 to 1/10 times of prior art.

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