发明名称 Wafer level package type FBAR device and manufacturing method thereof
摘要 Disclosed herein is a wafer level package type film bulk acoustic resonator (FBAR) device and a method for manufacturing the FBAR device, which can achieve miniaturization and reduction of a manufacturing cost due to a simplified process. The FBAR device comprises a substrate having a certain size, at least one device functional portion performing a resonance function by responding to electrical signals applied from the outside, the device functional portion being formed along a center portion of the substrate while defining a certain air gap therein, plural external electrodes formed on an upper surface of the substrate substantially coming into contact with both opposite edges of the upper surface, the external electrodes being electrically connected to the device functional portion, and a cap bonded onto the substrate so as to function as a cover for covering a remaining portion of the substrate except for the plural external electrodes.
申请公布号 US2005056917(A1) 申请公布日期 2005.03.17
申请号 US20040755336 申请日期 2004.01.13
申请人 KWON JONG OH 发明人 KWON JONG OH
分类号 H01L23/02;B81B7/00;H03H3/02;H03H9/10;H03H9/17;H03H9/24;(IPC1-7):H01L21/44;H01L21/30;H01L23/52 主分类号 H01L23/02
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