A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.
申请公布号
WO2005024325(A2)
申请公布日期
2005.03.17
申请号
WO2004US18925
申请日期
2004.07.08
申请人
TOKYO ELECTRON LIMITED;HO, CHUNG-PENG;NAFUS, KATHLEEN;YOSHIOKA, KAZ;YAMAGUCHI, RICHARD
发明人
HO, CHUNG-PENG;NAFUS, KATHLEEN;YOSHIOKA, KAZ;YAMAGUCHI, RICHARD