发明名称 HIGH FREQUENCY POWER SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To deal with a skin effect perfectly by increasing the surface area of an external output electrode without increasing a package size in a power semiconductor device having the external output electrode. <P>SOLUTION: The power semiconductor device includes a plurality of main terminals which pass main current of a power semiconductor element, and which are supported by a case made of a resin surrounding the power semiconductor element, so that the main terminals have a large main terminal forming a region bonding one end of a bonding wire connected to the power semiconductor element to an inside end; and a small main terminal forming an external connecting part by extending from the large main terminal and projecting its extended end from the case. The small main terminal and an auxiliary main terminal opposed to the case through the insulating layer of the same material are arranged, and as the laminated main terminal, the main current can be branched. The large main terminal of the adjacent laminated main terminal is arranged at a predetermined gap in a vertical direction on a surface to be bonded, and the insulating layer of the same material as the case is provided in the gap. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005072250(A) 申请公布日期 2005.03.17
申请号 JP20030299994 申请日期 2003.08.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 OGURI YOSHIHISA
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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