| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of judging misalignment in ion implantation capable of grasping the propriety of alignment in ion implantation, after completion of performing the ion implantation step in manufacture of a semiconductor element. SOLUTION: The method of judging misalignment in ion implantation is characterized by steps of forming on a semiconductor substrate, a misalignment judging pattern having first and second regions; implanting impurity ions of a first conductivity-type and ions of a second conductivity-type onto the semiconductor substrate targeting an active region and said misalignment judging pattern, respectively; measuring the resistance of misalignment judging pattern; and detecting misalignment of the ion implantation region, by comparing the resistance of said misalignment judging pattern to reference resistances prepared by measuring the resistances of the misalignment judging pattern for a variety of misalignment cases of the ion implantation region. COPYRIGHT: (C)2005,JPO&NCIPI
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