发明名称 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 Provided is a positive-typed resist composition which forms patterns with 0.5mum and less in line width interval for 3mum or more thickness of a resist film, therefore it shows high sensitivity and resolving power. In the positive-typed resist composition which includes an alkali soluble novolac resin with a repeating unit represented by formula 1 where m is an integer of 0-3 and a phenolic compound represented by formula 2 where R1 to R8 are independently H, a C1-C6 straight-, branched- or cyclic-alkyl radical or a C1-C6 straight-, branched- or cyclic-alkoxy radical, R9 to R11 are independently H, a C1-C6 straight-, branched- or cyclic-alkyl radical where R10 and R12 are possibly combined each other to form a ring, R12 is H, a C1-C6 straight alkyl radical or a radical represented by formula 3, (in which R13 and R14 are independently H, a C1-C6 straight-, branched- or cyclic-alkyl radical or a C1-C6 straight-, branched- or cyclic-alkoxy radical and d is an integer of 1-3), R12 and R9 are possibly combined each other to form a C3-C6 ring, a and b is an integer of 1-3, c is an integer of 0-3 and n is an integer of 0-3.
申请公布号 KR20050027073(A) 申请公布日期 2005.03.17
申请号 KR20040072619 申请日期 2004.09.10
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 FURIHATA, TOMOYOSHI;KATO, HIDETO
分类号 G03F7/004;C08G8/28;G03C1/76;G03F7/022;G03F7/023;H01L21/027;(IPC1-7):G03F7/023 主分类号 G03F7/004
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