| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for use under an exposure light source of ≤160 nm, particularly F<SB>2</SB>excimer laser light (157 nm), and to specifically provide a positive resist composition which exhibits satisfactory transmittance when a light source of 157 nm is used, ensures good pattern profile and line edge roughness, and produces little residue on development (scum). <P>SOLUTION: The positive resist composition contains (A) a fluorine-containing resin having a specified structure, (B) a compound which generates an acid upon irradiation with an actinic ray, and (X) a non-polymer type dissolution inhibitor having a specified structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
