发明名称 |
SILICON PRODUCTION APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a compact-sized silicon production apparatus capable of efficiently producing silicon. SOLUTION: The production apparatus of polycrystalline silicon has a reaction tube 2 of which the base material is a carbon material and into which chlorosilanes and hydrogen are supplied to react with each other to deposit silicon on the inner surface of the tube and a high-frequency heating coil 3 for heating the reaction tube 2. In the production apparatus, a plurality of reaction tubes 2 are arranged in parallel; and a high-frequency heating coil 4 is wound on the outer periphery of a reaction tube part 2a formed by these reaction tubes 2 with some clearance between the coil and each reaction tube 2. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005067939(A) |
申请公布日期 |
2005.03.17 |
申请号 |
JP20030298642 |
申请日期 |
2003.08.22 |
申请人 |
TOKUYAMA CORP |
发明人 |
NAKAJIMA JUNICHIRO;ODA HARUYUKI |
分类号 |
C01B33/035;F27B17/00;F27D11/06;(IPC1-7):C01B33/035 |
主分类号 |
C01B33/035 |
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