发明名称 PATTERNING METHOD, SEMICONDUCTOR DEVICE, AND ITS FABRICATING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a pattern easily with high precision by suppressing charging of an insulating film easily. SOLUTION: At first, a first conductive film 5 is provided on a substrate 1 to be processed and a second film 6 having an acid spread preventive function is provided on the first film 5. A third photosensitive film 7 is then provided on the second film 6. Subsequently, the third film 7 is irradiated with an energy beam and patterned and then the patterned third film 7 is developed, thus forming a pattern 8 on the third film 7. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005072083(A) 申请公布日期 2005.03.17
申请号 JP20030209309 申请日期 2003.08.28
申请人 TOSHIBA CORP 发明人 NAKASUGI TETSUO
分类号 H01L21/027;G03F7/00;G03F7/09;G03F7/11;H01L21/3213;(IPC1-7):H01L21/027 主分类号 H01L21/027
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