发明名称 |
METHOD FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL |
摘要 |
The invention relates to a method for producing at least one cavity in a material (1) having a hexagonal or cubic crystallographic structure, especially a carbide and/or a material containing silicon, said method comprising the following steps: at least one initial etching point (2) is formed in the material (1) on at least one pre-determined site (3), and the cavity is etched from the initial point (2) previously formed by exposing the material to a reducing environment. |
申请公布号 |
WO2005023703(A2) |
申请公布日期 |
2005.03.17 |
申请号 |
WO2004FR50423 |
申请日期 |
2004.09.10 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;HANBUECKEN, MARGRIT;WULFHEKEL, WULF;SANDER, DIRK |
发明人 |
HANBUECKEN, MARGRIT;WULFHEKEL, WULF;SANDER, DIRK |
分类号 |
B81C1/00;B82B3/00;C30B33/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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