发明名称 METHOD FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL
摘要 The invention relates to a method for producing at least one cavity in a material (1) having a hexagonal or cubic crystallographic structure, especially a carbide and/or a material containing silicon, said method comprising the following steps: at least one initial etching point (2) is formed in the material (1) on at least one pre-determined site (3), and the cavity is etched from the initial point (2) previously formed by exposing the material to a reducing environment.
申请公布号 WO2005023703(A2) 申请公布日期 2005.03.17
申请号 WO2004FR50423 申请日期 2004.09.10
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;HANBUECKEN, MARGRIT;WULFHEKEL, WULF;SANDER, DIRK 发明人 HANBUECKEN, MARGRIT;WULFHEKEL, WULF;SANDER, DIRK
分类号 B81C1/00;B82B3/00;C30B33/00 主分类号 B81C1/00
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