| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode device that is improved in luminous efficiency, and to provide a method of manufacturing the device. <P>SOLUTION: The light emitting diode device is provided with a substrate, a mixed layer, and first- and second-configuration semiconductor layers. The mixed layer is provided at least a roughened layer to which light rays are made incident in a diffused state. The roughened layer is formed as a thin film of a silicon nitride material or provided with an AlInGaN quantum dot. In the method of manufacturing the light emitting diode device, the mixed layer provided with at least one roughened layer is grown in the course of the epitaxial growth of the light emitting diode device so that the mixed layer may have a light-ray scattering function. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
