LIGHT EMITTING DIODE DEVICE WHERE SELECTIVE GROWTH IS APPLIED

摘要

PROBLEM TO BE SOLVED: To provide a light emitting diode device where selective growth is applied.

SOLUTION: An oxidation layer is formed on a surface of a substrate. The oxidation layer is patterned and a buffer layer is selectively grown on the oxidation layer by using lateral direction growing technology. An n-type gallium nitride layer, an active layer and a p-type gallium nitride layer are sequentially grown and an electrode is manufactured on the buffer layer so as to complete the light emitting diode device.

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