SOLID-STATE IMAGING APPARATUS AND CAMERA

摘要

PROBLEM TO BE SOLVED: To provide a MOS type solid-state imaging apparatus that can properly set gate potential of a read transistor and a reset transistor and prevent reduction in a saturated electric charge caused by a coupling capacitance and malfunction wherein a non-selection row is erroneously selected. SOLUTION: The solid-state imaging apparatus is provided with a potential setting section 50 that sets a Low level of a gate of an N-type read section 2 lower than a potential 18 of a P-type well 13 of an imaging region under the gate of the read section 2 and higher than a potential 19 of a P-type well 14 in a peripheral circuit region in order to prevent reduction in the saturated electric charge, and with a potential setting section 50 that sets a Low level of a gate of an N-type reset section 3 lower than the potential 18 of the P-type well 13 of the imaging region under the gate of the reset section 3 and higher than the potential 19 of the P-type well 14 in the peripheral circuit region in order to prevent malfunction wherein a non-selection row is erroneously selected. COPYRIGHT: (C)2005,JPO&NCIPI