METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method which can effectively supply hydrogen to a semiconductor substrate portion without depending on a layer structure and can effectively recover damage adjacent to a channel of a transistor even in a semiconductor with an enhanced multi-layer structure. SOLUTION: A transistor 7 is formed on a surface region of a SOI (silicon on insulator) substrate 1 which has an oxide film layer 3 in a depth direction and is isolated by an element isolating region 5. An inter-layer dielectric film 26 is formed on the SOI substrate 1 on which the transistor 7 is formed. A hole 27 is formed in the inter-layer dielectric film 26 to reach the element isolating region 5, and a dielectric film 29 containing hydrogen is formed to be buried in the hole 27, thus, a hydrogen supplying channel, where the hydrogen containing material is buried in the hole 27, is formed. After a necessary process is carried out, the hydrogen H is supplied to the SOI substrate 1 from the hydrogen supplying channel A through the element isolating region 5 and the oxide film layer 3 connected to it by carrying out a heat treatment. COPYRIGHT: (C)2005,JPO&NCIPI