INSULATING GATE TYPE SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PROVIDED THEREWITH

摘要

PROBLEM TO BE SOLVED: To provide an insulating gate type semiconductor element capable of establishing compatibility between both the operation uniformity and high reliability of an element region when employing a stacked structure, and to provide a semiconductor device provided with the same. SOLUTION: A gate bus line 23 is circularly provided along the external edge of the semiconductor substrate 15. An element chip to be stacked is mounted in the inner peripheral side so that the chip is not overlapped on the gate bus line 23. Also, a gate electrode 19 has a polycide structure in which a silicide film is formed on a polysilicon film. COPYRIGHT: (C)2005,JPO&NCIPI