Fast etching system and process for organic materials

摘要

Plasma reactor and process for very fast etching of organic materials in which a workpiece is placed on a pedestal in a chamber, gas is exhausted from the chamber, an oxidizing gas is introduced into the chamber through a showerhead electrode which is spaced from the pedestal by a distance on the order of 1.0 to 1.5 cm, RF power is applied to the pedestal and/or the showerhead electrode, and pressure within the chamber is maintained at a level on the order of 3 to 15 Torr while an organic material is removed from the workpiece.