发明名称 |
Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies |
摘要 |
An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. In one embodiment, the ESD protection circuit includes a pad adapted for connection to a first voltage source of a protected circuit node of the IC, and a silicon controlled rectifier (SCR) having an anode adapted for coupling to the first voltage source, and a cathode adapted for coupling to a second voltage source. At least one capacitive turn-on device respectively coupled between at least one of a first gate of the SCR and the first voltage source, and a second gate of the SCR and the second voltage source.
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申请公布号 |
US2005057866(A1) |
申请公布日期 |
2005.03.17 |
申请号 |
US20040899383 |
申请日期 |
2004.07.26 |
申请人 |
MERGENS MARKUS PAUL JOSEF;RUSS CORNELIUS CHRISTIAN;ARMER JOHN;VERHAEGE KOEN GERARD MARIA |
发明人 |
MERGENS MARKUS PAUL JOSEF;RUSS CORNELIUS CHRISTIAN;ARMER JOHN;VERHAEGE KOEN GERARD MARIA |
分类号 |
H01L27/02;H03K17/0812;H03K17/0814;H03K17/30;(IPC1-7):H02H9/00 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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