| 摘要 |
A multiple channel programmable gamma correction voltage generator including a resistor ladder, buffers, select logic, and a programmable non-volatile memory device. The memory provides select values indicative of one or more stored gamma correction values. The resistor ladder includes adjustable tap resistors distributed along the resistor ladder. The adjustable tap resistors provide multiple tap voltages distributed according to the gamma correction value. The buffers receive the tap voltages and provide gamma correction voltages. The select logic selects tap points of the adjustable tap resistors to select the tap voltages based on the select values stored in the memory. Additional resistors and switch logic may be included to enable re-positioning of the adjustable tap resistor within the resistor ladder. Latches and address control may be provided on the memory to enable programming and selection of multiple gamma correction values.
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