| 摘要 |
PROBLEM TO BE SOLVED: To provide a high speed semiconductor storage device with forward timing. SOLUTION: The semiconductor storage comprises a 1st circuit for outputting a burst start address fetching pulse for fetching a burst start address supplied externally in synchronization with a clock signal, and a 2nd circuit for outputting an internally generated address fetching pulse for fetching an internal address generated internally following the burst start address in synchronization with the clock signal, and is characterized in that the 2nd circuit comprises a burst length control circuit for producing a period signal for indicating a period for generating the internally generated address fetching pulse, and a synchronization circuit for producing the internally generated address fetching pulse with the period signal synchronized with the clock signal. COPYRIGHT: (C)2005,JPO&NCIPI
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