发明名称 |
Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer |
摘要 |
A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
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申请公布号 |
US2005056352(A1) |
申请公布日期 |
2005.03.17 |
申请号 |
US20030662028 |
申请日期 |
2003.09.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHOE KWANG SU;FOGEL KEITH E.;SADANA DEVENDRA K. |
分类号 |
C22F1/10;H01L21/20;H01L21/762;(IPC1-7):C22F1/00 |
主分类号 |
C22F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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