发明名称 |
GaN based semiconductor light emitting device and method of making the same |
摘要 |
A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.
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申请公布号 |
US2005056850(A1) |
申请公布日期 |
2005.03.17 |
申请号 |
US20040926398 |
申请日期 |
2004.08.26 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
TAKI TETSUYA |
分类号 |
H01L21/00;H01L21/205;H01L33/06;H01L33/22;H01L33/24;H01L33/32;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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