发明名称 |
Back-biased face target sputtering |
摘要 |
A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder.
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申请公布号 |
US2005056534(A1) |
申请公布日期 |
2005.03.17 |
申请号 |
US20030662862 |
申请日期 |
2003.09.15 |
申请人 |
NAGASHIMA MAKOTO;SCHMIDT DOMINIK |
发明人 |
NAGASHIMA MAKOTO;SCHMIDT DOMINIK |
分类号 |
C23C14/35;H01J37/34;(IPC1-7):C23C14/32 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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