发明名称 Half tone alternating phase shift masks
摘要 A structure, a method of fabricating and a method of using a phase shift mask (PSM) having a first phase shifted section, a half tone section, and a second phase shifted section. The first phase shift section and the half tone section are shifted 180 degrees with the second phase shift region. Embodiments provide for (1) a half tone, single trench alternating phase shift mask and (2) a half tone, dual trench alternating phase shift mask. The half tone region provides advantages over conventional alternating phase shift masks.
申请公布号 US2005058912(A1) 申请公布日期 2005.03.17
申请号 US20030661048 申请日期 2003.09.13
申请人 LIN QUN YING;TAN SIA KIM;TAN SOON YOENG;CHONG HUEY MING 发明人 LIN QUN YING;TAN SIA KIM;TAN SOON YOENG;CHONG HUEY MING
分类号 G03F1/00;G03F9/00;(IPC1-7):G03F9/00 主分类号 G03F1/00
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