| 摘要 |
There is provided a method of manufacturing a semiconductor device comprising steps of providing a semiconductor substrate, forming a gate oxide film over the semiconductor substrate, forming a stacked gate structure on the gate oxide film comprising a floating gate electrode and a control gate electrode with a gate insulating film interposed therebetween, forming a charge leak protect film comprising oxide film with a heat-treatment around the stacked gate structure on the gate oxide film so that the charge leak protect film becomes as thick as the gate oxide film, forming a side wall on a vertical surface of the charge leak protect film, and treating the charge leak protect film with a heat-treatment so that the charge leak protect film becomes thicker than the gate oxide film.
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