发明名称 WASHING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a washing method of semiconductor substrate for enabling delicate washing process, only with simplified dillution by water in accordance with the size of wiring width and amount of deposition, of the semiconductor substrates in different sizes of the wiring width having excellent deposition peeling property and corrosion-proof characteristic of wires, and also to provide a method of manufacturing a semiconductor substrate or semiconductor element utilizing the same washing method. SOLUTION: The washing method of semiconductor substrate is characterized in using a non-fluorine system peeling agent substance of pH 10 or less including at least the water of 20 weight % and the peeling agent by dilluting the same substance with the water when the same substance is used, and the method of manufacturing semiconductor substrate or semiconductor element includes the step of washing the same semiconductor substrate or semiconductor element. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005072257(A) 申请公布日期 2005.03.17
申请号 JP20030300190 申请日期 2003.08.25
申请人 KAO CORP 发明人 DOI YASUHIRO;TAMURA ATSUSHI
分类号 G03F7/42;H01L21/027;H01L21/304;(IPC1-7):H01L21/304 主分类号 G03F7/42
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