发明名称 |
Plasma apparatus and method capable of adaptive impedance matching |
摘要 |
A plasma apparatus capable of adaptive impedance matching comprises a plasma reactor which can produce plasma to proceed with CVD (chemical vapor deposition) process, a bi-polar electrostatic chuck which locates inside the plasma reactor and is used to support and secure a wafer, an alternating current bias power supply which connects to the bi-polar electrostatic chuck supplies the voltage potential bias for ion-bombardment from plasma, and an impedance-matching circuit which connects the alternating current bias power supply to the bi-polar electrostatic chuck is used to balance the inner electrode power output and the outer electrode power output of the bi-polar electrostatic chuck.
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申请公布号 |
US2005056369(A1) |
申请公布日期 |
2005.03.17 |
申请号 |
US20030659258 |
申请日期 |
2003.09.11 |
申请人 |
LAI CHIEN-HSIN;LIN SAN-AN;YEN KUO-EN;HUANG KUO-UEI |
发明人 |
LAI CHIEN-HSIN;LIN SAN-AN;YEN KUO-EN;HUANG KUO-UEI |
分类号 |
C23C16/458;C23C16/507;H01J37/32;(IPC1-7):C23F1/00 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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