METHOD OF REGENERATING RELEASABLE WAFER AND REGENERATED WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of regenerating a releasable wafer by which the regenerating cost of the releasable wafer can be reduced in recycling the releasable wafer twice or more. SOLUTION: After an ion-implanted region 13b is formed in a semiconductor wafer 13 by implanting ions into the wafer 13, a thick first releasable wafer 12 is obtained by heat-treating a first laminate 16 constituted by superimposing the semiconductor wafer 13 upon a first supporting wafer 14. Then an ion-implanted region 23b is formed in the releasable wafer 12 by implanting ions into the second principal surface 12c of the wafer 12 on the side opposite to the separation surface 12a of the wafer 12 and a thick second releasable wafer 22 is obtained by heat-treating a second laminate 16 constituted by superimposing the principal surface 12c of the wafer 12 upon a second supporting wafer 24. Thereafter, a regenerated wafer 32 is obtained by polishing both surfaces of the releasable wafer 22. The separation surfaces 12a and 22a of the first and second releasable wafers 12 and 22 respectively have ring-like steps 12b and 22b on their outer peripheral edges. The steps 12b and 22b are simultaneously removed by polishing both surfaces of the second releasable wafer 22. COPYRIGHT: (C)2005,JPO&NCIPI