SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE USING THE SAME AND OPTICAL FIBER AMPLIFYING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device which enables a high output operation with an excellent reliability. SOLUTION: In the semiconductor laser device having a p-type clad layer, an n-type clad layer and an active layer, the n-type clad layer comprises two or more layers which have a different composition containing InP and GaInAsP, in particular preferably, a superlattice structure. Also, a refractive index of the n-type clad layer is greater than that of the p-type clad layer. COPYRIGHT: (C)2005,JPO&NCIPI